The Odisha Cabinet has approved a customized incentive package for RIR Power Electronics Ltd to set up India’s first Silicon Carbide (SiC) semiconductor manufacturing facility. With an estimated investment of 618.60 INR-Crore, this pioneering project will be established in Bhubaneswar.
The ambitious initiative will unfold in two phases. This state-of-the-art facility will focus on Silicon Carbide (SiC) devices, serving critical sectors such as electric vehicles, renewable energy, railways, and defense. Notably, it promises to generate 750 jobs, further boosting the local economy.
Also Read: India’s Semiconductor Boom: Key Takeaways from Semicon India 2024
As India’s first compound semiconductor fab, this facility will elevate domestic manufacturing capabilities. It will also house advanced processes like epitaxial layer deposition and packaging. Through this semiconductor facility, Odisha positions itself as a hub for cutting-edge electronics and sustainable development.
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